Simulations / MOSFET N-Channel MOSFET Transistor Long-channel Level 1 physics model using sourced silicon material data. Parameters are computed analytically from device geometry, bias, doping, oxide charge, and temperature.
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r d s = 1 / ( l a m b d a I D ) r_{ds}=1/(\\lambda I_D) r d s ​ = 1/ ( l amb d a I D ​ ) 1.48 kOhm p h i F \\phi_F p h i F ​ 0.415 V X d , m a x X_{d,max} X d , ma x ​ 103.6 nm g a m m a \\gamma g amma 0.528 V^0.5 Q i n v Q_{inv} Q in v ​ 7.641e-7 C/cm^2 C o x C_{ox} C o x ​ 3.453 fF/um^2
Intrinsic carrier conc. 1.059e+10 cm^-3 Long-channel (L > 0.25um) Level 1 analytical model. Not modeled: short-channel effects, velocity saturation, quantum confinement, polysilicon depletion, gate tunneling, DIBL, or hot-carrier effects.
Device Cross-Section GATE METAL G tox 10.0 nm p-type substrate SOURCE n+ DRAIN n+ S D B inversion channel depletion width 104 nm VGS 2.50 V VDS 2.00 V VBS 0.00 V Vth 0.29 V Energy Band Diagram Metal gate SiO2 Si EF EFs Ec Ev Ei inversion VFB -1.02 V Vth 0.29 V psi_s 1.16 V
Output Characteristics ID vs VDS Transfer Characteristics ID vs VGS Log scale